首页> 外国专利> DEPOSITION OF SUPER HARD TiAlSiN THIN FILMS BY CATHODIC ARC PLASMA DEPOSITION

DEPOSITION OF SUPER HARD TiAlSiN THIN FILMS BY CATHODIC ARC PLASMA DEPOSITION

机译:阴极电弧等离子体沉积沉积超硬TiAlSiN薄膜

摘要

This invention relates to ultra-high hardness TiAlSiN film deposition method using a cathodic arc deposition, and a Ti target, AlSi target install the arc source, or prepared by the cutting tool of the ultra-high hardness by installing the Arc source, the target organic compound TiAlSi arc discharge while injecting nitrogen gas to form a plasma so as to form a coating layer on the target object surface TiAlSiN it is an object to provide an ultra-high hardness TiAlSiN film deposition method using a cathodic arc deposition. ; The present invention cathodic arc vapor deposition process for ultra-high-hardness thin film deposited using a cathodic arc deposition TiAlSiN largely Ti target and AlSi target, or the target installation process to install TiAlSi target; And the target to be processed is provided inside the vacuum chamber 10 -5 ~10 -7 Torr and the process of removing air inside the chamber down to; 10, the degree of vacuum within the chamber by injecting an inert gas into the chamber -1 ~10 -3 by setting a plasma Torr for cleaning an object to be treated in a surface cleaning process ; After introducing nitrogen into the chamber and electric current was applied to the arc source to form a plasma by applying a bias voltage is characterized by comprising forming a TiAlSiN layers. ; When applying the present invention, Ti The coating is applied to the target potential is 18V, and the coating current is 45A, AlSi 19V potential is applied to a coating target, the coating current is a result of the cathodic arc deposition to ensure that the 35A, the advantage that the obtained coating film of the ultra-high hardness all you have.
机译:本发明涉及利用阴极电弧沉积和Ti靶的超高硬度TiAlSiN膜沉积方法,AlSi靶安装电弧源,或通过安装超高硬度切削刀具通过安装电弧源,靶为了提供一种有机化合物TiAlSi电弧放电,同时注入氮气以形成等离子体,以便在目标物表面TiAlSiN上形成涂层,本发明的目的是提供一种使用阴极电弧沉积的超高硬度TiAlSiN膜沉积方法。 ;本发明的阴极电弧气相沉积工艺,用于利用阴极电弧沉积沉积的TiAlSiN超大薄膜Ti靶和AlSi靶,或者靶安装过程以安装TiAlSi靶;真空室10内设置有待处理的靶材 -5 〜10 -7 Torr,将真空室内的空气去除至最低。参照图10,通过设置用于清洁待处理物体的等离子托来向腔室内注入惰性气体 -1 〜10 -3 来形成腔室内的真空度。表面清洁过程;在将氮气引入腔室中之后,通过施加偏置电压将电流施加到电弧源以形成等离子体,其特征在于包括形成TiAlSiN层。 ;在应用本发明时,将Ti涂层施加到目标电位为18V,涂层电流为45A,将AlSi 19V电位施加到涂层目标,涂层电流是阴极电弧沉积的结果,以确保如图35A所示,所获得的所有超高硬度涂膜都具有。

著录项

  • 公开/公告号KR100659743B1

    专利类型

  • 公开/公告日2006-12-20

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20050031701

  • 发明设计人 김선규;

    申请日2005-04-16

  • 分类号C23C14/24;

  • 国家 KR

  • 入库时间 2022-08-21 20:39:30

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