Inductively Coupled Plasma Chemical Vapor DepositionICP-CVD Apparatus, System and Method for Fabricating P-Type ZnO Films without Any Doping Process by Using ICP-CVD Apparatus, and Optical Power Compound Semiconductor

摘要

The present invention provides a p-type zinc oxide thin film production system capable of producing a p-type zinc oxide (ZnO) thin film used in the photoelectric device only by controlling the oxygen flow rate by introducing an inductively coupled plasma into the chemical vapor deposition method and a separate metal doping and It's about how.;The p-type zinc oxide thin film includes the steps of loading a substrate into the reaction chamber; Supplying oxygen gas and DEZ (diethylzinc, Zn (C ₂ H ₅ ) ₂ ) gas into the reaction chamber through independent first and second gas lines, respectively; It is obtained by depositing a p-type ZnO thin film on the substrate by decomposing and activating oxygen gas and DEZ gas injected into the chamber using an inductively coupled plasma (ICP) generator.;Inductively Coupled Plasma, Chemical Vapor Deposition, p-type ZnO, Doping