Single step ohmic contact for heavily doped n-type silicon

摘要

This work focusses on the metal-semiconductor contact on n-type c-Si wafers and explore the possibility of using magnesium (Mg) to form electron-selective contacts instead of using the conventional Au-Sb films which requires high temperature annealing between 350 and 500 degrees C. Aluminium (Al) capping layer was added over the magnesium contacts to prevent oxidation of magnesium. Various electrical measurements were performed over thermally evaporated Mg/Al contacts to investigate the conduction properties on both p-type and n-type silicon, where a Schottky behaviour was observed for the p doped silicon, but an ohmic behaviour (V alpha I) for the n-type doped c-Si samples. The results were further optimised after investigating various thicknesses of the Mg interlayer, with 10 nm of Mg interlayer found to have the least resistance. The resistivity of the optimised structure (n-Si/Mg-10 nm/Al) was calculated, and measurements according to the Transmission Line Method (TLM) showed a contact resistivity of 462 m Omega cm(2) +/- 20 m Omega cm(2). Further investigations were also conducted on the effect of high temperature annealing of the magnesium contact, which showed an increase in resistance with increase in annealing temperature, with the lowest resistance obtained without annealing. Additional investigations focussed on the morphological analysis of the deposited magnesium and its impact on the electrical characteristics.