一种N型轻掺杂氢化硅基薄膜的欧姆接触

摘要

使用等离子体增强化学气相沉积方法制备了一组磷掺杂氢化硅基薄膜.I-U曲线显示薄膜与铝电极形成了良好的欧姆接触.霍尔测试结果表明该组样品为轻掺杂；利用拉曼光谱和紫外-可见吸收光谱对薄膜的微结构和光学带隙进行了表征,并从薄膜能带结构出发探讨了形成欧姆接触的原因.%A set of samples with different crystallization rates of N-type lightly doped hydrogenated silicon films have been prepared by plasma enhanced chemical vapor deposition (PECVD). Hall test showed the samples are lightly doped. The I-U curve of thin film contact with aluminum has been tested. Result showed that they are good ohmic contacts. Band structure and optical band gap of the films were characterized by Raman spectrum and UV-visible absorption spectra. Analysis revealed that the unique band structure of thin films is an important reason for the formation of ohmic contact.