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Iridium size effects in localized surface plasmon-enhanced diamond UV photodetectors

机译:局部表面等离子体增强金刚石紫外光电探测器中铱尺寸的影响

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摘要

Localized surface plasmon-enhanced diamond UV photodetectors with different Ir nanoisland arrays had been successfully fabricated. Three different Ir nanoisland arrays with the diameters of 20(D20), 30(D30) and 40(D40) nm were deposited on the diamond surface, respectively, and their height was 10 nm. Ti/Au metal electrodes were patterned on Ir nanoisland arrays area and bare diamond surface to form UV photodetectors. According to photoelectric performance WA results, the responsivities of diamond photodetectors with Ir nanoislands were far greater than that of diamond photodetector, and the D40 showed the highest photocurrent and responsivity at 210 nm, and the D20 indicated the highest UV/vis rejection ratio. The results of simulated extinction spectra exhibited three resonance peaks at UV and visible region for each sample, indicating that D20 had the highest ratio of UV/vis, which was coincide with experiment results.
机译:已经成功地制造了具有不同Ir纳米岛阵列的局部表面等离激元增强型金刚石紫外光电探测器。直径分别为20(D20),30(D30)和40(D40)nm的三种不同的Ir纳米岛阵列分别沉积在金刚石表面上,其高度为10 nm。在Ir纳米岛阵列区域和裸露的金刚石表面上对Ti / Au金属电极进行构图,以形成UV光探测器。根据光电性能WA结果,具有Ir纳米岛的金刚石光电探测器的响应度远远大于金刚石光电探测器,D40在210 nm处具有最高的光电流和响应度,而D20则具有最高的UV / vis抑制比。模拟消光光谱的结果在每个样品的UV和可见光区域均显示出三个共振峰,表明D20具有最高的UV / vis比,这与实验结果一致。

著录项

  • 来源
    《Applied Surface Science》 |2019年第1期|674-677|共4页
  • 作者单位

    Xi An Jiao Tong Univ, Shaanxi Key Lab Informat Photon Tech, Inst Wide Band Gap Semicond, Xian 710049, Shaanxi, Peoples R China;

    Xi An Jiao Tong Univ, Shaanxi Key Lab Informat Photon Tech, Inst Wide Band Gap Semicond, Xian 710049, Shaanxi, Peoples R China;

    Xi An Jiao Tong Univ, Shaanxi Key Lab Informat Photon Tech, Inst Wide Band Gap Semicond, Xian 710049, Shaanxi, Peoples R China;

    Xi An Jiao Tong Univ, Shaanxi Key Lab Informat Photon Tech, Inst Wide Band Gap Semicond, Xian 710049, Shaanxi, Peoples R China;

    Xi An Jiao Tong Univ, Shaanxi Key Lab Informat Photon Tech, Inst Wide Band Gap Semicond, Xian 710049, Shaanxi, Peoples R China;

    Xi An Jiao Tong Univ, Shaanxi Key Lab Informat Photon Tech, Inst Wide Band Gap Semicond, Xian 710049, Shaanxi, Peoples R China;

    Xi An Jiao Tong Univ, Shaanxi Key Lab Informat Photon Tech, Inst Wide Band Gap Semicond, Xian 710049, Shaanxi, Peoples R China;

    Xi An Jiao Tong Univ, Shaanxi Key Lab Informat Photon Tech, Inst Wide Band Gap Semicond, Xian 710049, Shaanxi, Peoples R China;

    Xi An Jiao Tong Univ, Shaanxi Key Lab Informat Photon Tech, Inst Wide Band Gap Semicond, Xian 710049, Shaanxi, Peoples R China;

    Xi An Jiao Tong Univ, Shaanxi Key Lab Informat Photon Tech, Inst Wide Band Gap Semicond, Xian 710049, Shaanxi, Peoples R China;

    Taiyuan Univ Sci & Technol, Sch Mat Sci & Engn, Taiyuan 030024, Shanxi, Peoples R China;

    Xi An Jiao Tong Univ, Shaanxi Key Lab Informat Photon Tech, Inst Wide Band Gap Semicond, Xian 710049, Shaanxi, Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Diamond; UV photodetector; Localized surface plasmon resonance;

    机译:金刚石;紫外光电探测器;局部表面等离子体共振;

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