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Iridium size effects in localized surface plasmon-enhanced diamond UV photodetectors

机译:铱尺寸在局部表面等离子体增强型金刚石UV光电探测器中的效果

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摘要

Localized surface plasmon-enhanced diamond UV photodetectors with different Ir nanoisland arrays had been successfully fabricated. Three different Ir nanoisland arrays with the diameters of 20(D20), 30(D30) and 40(D40) nm were deposited on the diamond surface, respectively, and their height was 10 nm. Ti/Au metal electrodes were patterned on Ir nanoisland arrays area and bare diamond surface to form UV photodetectors. According to photoelectric performance WA results, the responsivities of diamond photodetectors with Ir nanoislands were far greater than that of diamond photodetector, and the D40 showed the highest photocurrent and responsivity at 210 nm, and the D20 indicated the highest UV/vis rejection ratio. The results of simulated extinction spectra exhibited three resonance peaks at UV and visible region for each sample, indicating that D20 had the highest ratio of UV/vis, which was coincide with experiment results.
机译:已成功制造具有不同IR纳米岛阵列的局部表面等离子体增强的金刚石UV光电探测器。三个不同的IR纳米岛阵列分别沉积在金刚石表面上的20(D20),30(D30)和40(D40)和40(D40)NM的阵列,它们的高度为10nm。 Ti / Au金属电极在IR Nanoisland阵列区域和裸金刚石表面上图案化以形成UV光电探测器。根据光电性能WA结果,用IR纳米岛的金刚石光电探测器的响应远大于金刚石光电探测器的响应,并且D40在210nm处显示出最高的光电流和响应性,D20表示最高的UV / Vis排斥比。模拟消光光谱的结果在UV和每个样品的UV和可见区域上表现出三个共振峰,表明D20具有紫外/免疫比率的最高比,这与实验结果一致。

著录项

  • 来源
    《Applied Surface Science》 |2019年第1期|674-677|共4页
  • 作者单位

    Xi An Jiao Tong Univ Shaanxi Key Lab Informat Photon Tech Inst Wide Band Gap Semicond Xian 710049 Shaanxi Peoples R China;

    Xi An Jiao Tong Univ Shaanxi Key Lab Informat Photon Tech Inst Wide Band Gap Semicond Xian 710049 Shaanxi Peoples R China;

    Xi An Jiao Tong Univ Shaanxi Key Lab Informat Photon Tech Inst Wide Band Gap Semicond Xian 710049 Shaanxi Peoples R China;

    Xi An Jiao Tong Univ Shaanxi Key Lab Informat Photon Tech Inst Wide Band Gap Semicond Xian 710049 Shaanxi Peoples R China;

    Xi An Jiao Tong Univ Shaanxi Key Lab Informat Photon Tech Inst Wide Band Gap Semicond Xian 710049 Shaanxi Peoples R China;

    Xi An Jiao Tong Univ Shaanxi Key Lab Informat Photon Tech Inst Wide Band Gap Semicond Xian 710049 Shaanxi Peoples R China;

    Xi An Jiao Tong Univ Shaanxi Key Lab Informat Photon Tech Inst Wide Band Gap Semicond Xian 710049 Shaanxi Peoples R China;

    Xi An Jiao Tong Univ Shaanxi Key Lab Informat Photon Tech Inst Wide Band Gap Semicond Xian 710049 Shaanxi Peoples R China;

    Xi An Jiao Tong Univ Shaanxi Key Lab Informat Photon Tech Inst Wide Band Gap Semicond Xian 710049 Shaanxi Peoples R China;

    Xi An Jiao Tong Univ Shaanxi Key Lab Informat Photon Tech Inst Wide Band Gap Semicond Xian 710049 Shaanxi Peoples R China;

    Taiyuan Univ Sci & Technol Sch Mat Sci & Engn Taiyuan 030024 Shanxi Peoples R China;

    Xi An Jiao Tong Univ Shaanxi Key Lab Informat Photon Tech Inst Wide Band Gap Semicond Xian 710049 Shaanxi Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Diamond; UV photodetector; Localized surface plasmon resonance;

    机译:钻石;UV光电探测器;局部表面等离子体共振;

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