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The Oscillatory Adsorption of Organosilane Films on Aluminium Oxide: Film Morphology using Auger Electron Spectromicroscopy

机译:氧化铝上有机硅烷薄膜的振荡吸附:俄歇电子能谱法的薄膜形态学

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摘要

The morphology of Propyltrimethoxysilane films during the oscillatory growth mechanism is shown using Auger Electron Spectromicroscopy. While the link between oligomerisation of silane molecules on the substrate and the oscillatory growth mechanism has been proposed previously, here for the first time we show the presence of silane film islands through Auger Electron Spectromicroscopy elemental mapping of the substrate. Monitoring the morphology of the film at key peaks and throughout along the oscillatory curve reveals the formation of a stable thin, homogenous film along with the presence of islands approximately 20 mu m in diameter, whose numbers vary collectively during the adsorption/desorption mechanism. The measurable oscillations in silane substrate coverage has been directly linked to the repeated adsorption and desorption of silane islands on the aluminium substrate. The consequence of this mechanism is such that Propyltrimethoxysilane films behave most like a monolayer during the early stages of film growth, prior to siloxane oligomerisation.
机译:使用俄歇电子能谱仪显示了在振荡生长机理中的丙基三甲氧基硅烷膜的形态。虽然先前已经提出了硅烷分子在基板上的低聚与振荡生长机制之间的联系,但在这里我们首次通过俄歇电子能谱显微镜对基板进行元素映射来显示硅烷膜岛的存在。监测薄膜在关键峰处以及整个振荡曲线的形态,发现形成了稳定的均匀薄膜,同时存在直径约20微米的岛,其数目在吸附/解吸机理中共同变化。硅烷基材覆盖率的可测量振荡直接与铝基材上硅烷岛的重复吸附和解吸有关。该机理的结果是,在硅氧烷低聚之前,在膜生长的早期阶段,丙基三甲氧基硅烷膜的行为最像单层。

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