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The oscillatory adsorption of self‐assembled organosilane films on aluminium oxide surfaces

机译:氧化铝表面上自组装有机硅烷膜的振荡吸附

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摘要

>The time‐dependent oscillatory growth mechanism of organosilane film self‐assembly on aluminium oxide has been investigated using X‐ray photoelectron spectroscopy. While this unusual oscillatory process has been reported for the trifunctional silane, propyltrimethoxysilane, we report here, for the first time, that this oscillatory behaviour is also present during the self‐assembly of the difunctional silane propylmethyldimethoxysilane. The presence of multiple oscillations in this growth mechanism is also first reported for propyltrimethoxysilane and propylmethyldimethoxysilane as a function of exposure time. Multiple oscillations indicate that the 3‐component model that is used to describe and fit a single coverage oscillation must be reconsidered and contain additional components to account for the multiple oscillations seen experimentally. The absence of such oscillatory behaviour in the growth of the monofunctional organosilane propyldimethylmethoxysilane, which in fact follows a Langmuir‐type growth mechanism, indicates that this measurable oscillatory behaviour is because of the ability of multifunctional silanes to oligomerise both on the substrate and in solution.
机译: >有机硅烷膜自组装在铝上的时间依赖性振荡增长机制已经使用X射线光电子能谱研究了氧化物。虽然已经报道了这种异常振荡过程的三官能硅烷,丙基三甲氧基硅烷,我们首次报告该振荡行为在双官能硅烷丙基甲基甲基二甲硅烷的自组装期间也存在。还首先报道该生长机制中多种振荡的存在,以丙基三甲氧基硅烷和丙基甲基二甲氧基硅烷作为暴露时间的函数。多个振荡表明,用于描述和拟合单个覆盖振荡的3组件模型必须重新考虑并包含其他组件,以考虑实验所看到的多个振荡。在单官能有机硅烷丙基甲基甲基甲硅烷的生长中没有这种振荡行为,其实际上遵循Langmuir型生长机制,表明该可测量的振荡行为是因为多官能硅烷在基材和溶液中的寡聚物体的能力。

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