COMPOSITION FOR OXIDE FILM, A MANUFACTURING METHOD THEREOF, OXIDE THIN FILM AND ELECTRIC COMPONENT USING THE COMPOSITION FOR OXIDE THIN FILMS CAPABLE OF CONTROLLING ELECTRON CONCENTRATION OF OXIDE SEMICONDUCTOR THIN FILMS

摘要

PURPOSE: A composition for oxide film, a manufacturing method thereof, oxide thin film and electric component using the composition for oxide thin films are provided to improve electrical properties of the electric components by including indium, zinc and scandium which has low electronegativity.;CONSTITUTION: A composition for oxide film comprises a first compound, a second compound and a third compound. The first compound comprises tin or indium. The second compound comprises zinc. The third compound includes scandium. 1-99 atomic% of scandium is included based on total atom number of zinc and indium or zinc and tin. The atomic ratio of zinc to indium or zinc to tin is 1:5-5:1. The third compound comprises scandium acetate hydrate, scandium acetylacetonate hydrate, scandium chloride, scandium chloride hexahydrate, scandium chloride hydrate, scandium fluoride, scandium nitrate hydrate or a combination thereof. The electric component comprises the oxide semiconductor thin film. The oxide semiconductor thin film comprises indium or tin, zinc, and scandium.;COPYRIGHT KIPO 2012