Activation Energies Of The Acceptor-bound Excitons And The Donor-acceptor Pairs In Nitrogen-doped P-type Znse, P-type Zns_yse_(1-y), And P-type Zn_(1-x)mg_xs_yse_(1-y) Epitaxial Films Grown On Gaas (1 0 0) Substrates

摘要

Nitrogen-doped p-type ZnSe, p-type ZnS_ySe_(1-y), and p-type Zn_(1-x)Mg_xS_ySe_(1-y) epilayers were grown on n-type GaAs (1 0 0) substrates by molecular beam epitaxy. Photoluminescence (PL) spectra for the p-type ZnSe and the lattice-matched p-type ZnS_(0.06)Se_(0.94), and p-type Zn_(0.92)Mg_(0.08)S_(0.12)Se_(0.88) epilayers showed a deep acceptor bound exciton emission and a donor-acceptor pair emission. Temperature-dependent PL measurements were carried out to determine the activation energies of these states. The activation energies of the acceptor-bound excitons and the donor-acceptor pairs were determined to be 40 and 65 meV in the p-type ZnSe epilayer, 20 and 45 meV in the p-type ZnS_(0.06)Se_(0.94), and 45 and 43 meV in the p-type Zn_(0.92)Mg_(0.08)S_(0.12)Se_(0.88) epilayers.