IN-SITU P-TYPE ACTIVATION OF III-NITRIDE FILMS GROWN VIA METAL ORGANIC CHEMICAL VAPOR DEPOSITION

摘要

Methods for activating a p-type dopant in a group III-Nitride semiconductor are provided. In embodiments, such a method comprises annealing, in situ, a film of a group III-Nitride semiconductor comprising a p-type dopant formed via metalorganic chemical vapor deposition (MOCVD) at a first temperature for a first period of time under an atmosphere comprising NH₃ and N₂; and cooling, in situ, the film of the group III-Nitride semiconductor to a second temperature that is lower than the first temperature under an atmosphere comprising N₂ in the absence of NH₃, to form an activated p-type group III-Nitride semiconductor film.