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BST Films Grown by Metal Organic Chemical Vapor Deposition Incorporating Real-Time Control of Stoichiometry.

机译：金属有机化学气相沉积生长的BsT薄膜结合了化学计量的实时控制。

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We present preliminary results of metal organic chemical vapor deposition (MOCVD) growth of BaxSr1-xTiO3 (BST) thin films. Films were deposited on MgO, sapphire, Si, and Si/Pt/Ti substrates. Real-time monitoring of the precursor flux by UV absorption spectroscopy was used to control the composition of the films over the range 30.

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C. Hubbard D. A. Boyd M. W. Cole S. G. Hirsch;
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年度 2009
页码 1-13
总页数 13
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Absorption; Bst(Baxsr1-xtio3); Chemical vapor deposition; Crystal structure; Ferroelectric materials; Ferroelectric thin films; Layers; Magnesium oxides; Mocvd(Metal organic chemical vapor deposition); Molar ratios; Morphology; Optical absorption; Platinum; Precursor ratios; Ratios; Real time; Sapphire; Silicon; Stoichiometry; Substrates; Temperature; Thickness; Thin films; Titanium; Ultraviolet radiation; X ray diffraction;

机译：吸收; Bst（Baxsr1-xtio3）;化学气相沉积;晶体结构;铁电材料;铁电薄膜;层;氧化镁; mocvd（金属有机化学气相沉积）;摩尔比;形态学;光学吸收;铂;前体比;比率;实时;蓝宝石;硅;化学计量;基板;温度;厚度;薄膜;钛;紫外线辐射; X射线衍射;

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专利

1. BST FILMS GROWN BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION INCORPORATING REAL-TIME CONTROL OF STOICHIOMETRY [J] . DAVID A. BOYDa S. G. HIRSCHb C. HUBBARDb, M. W. COLEb Integrated Ferroelectrics: An International Journal . 2010,第1期

机译：金属有机化学气相沉积生长的BST膜结合了化学计量的实时控制
2. BST Films Grown by Metal Organic Chemical Vapor Deposition Incorporating Real-Time Control of Stoichiometry [J] . David A. Boyd, S. G. Hirsch, C. Hubbard Integrated Ferroelectrics . 2009,第Null期

机译：金属化学气相沉积结合化学计量的实时控制生长的BST膜
3. Magnesium incorporation efficiencies in MgxZn1-xO films on ZnO substrates grown by metalorganic chemical vapor deposition [J] . Qi-Chang Hu, Kai Ding 中国物理：英文版 . 2017,第006期

机译：通过金属有机化学气相沉积法在ZnO衬底上的MgxZn1-xO薄膜中的镁结合效率
4. Polarity Control of GaN Films Grown by Metal Organic Chemical Vapor Deposition on (0001) Sapphire Substrates [C] . Seiji Mita, Ramon Collazo, Raoul Schlesser, Symposium on GaN, AIN, InN and Their Alloys . 2005

机译：金属有机化学气相沉积GaN薄膜的极性控制（0001）蓝宝石基材
5. Tantalum and tantalum nitride films grown by inorganic low-temperature chemical vapor deposition for copper metallization: Chemistry, process, and material development and characterization. [D] . Chen, Xiaomeng. 1998

机译：通过无机低温化学气相沉积法生长的钽和氮化钽膜，用于铜金属化：化学，工艺以及材料开发和表征。
6. Strain-Compensated InGaAsP Superlattices for Defect Reduction of InP Grown on Exact-Oriented (001) Patterned Si Substrates by Metal Organic Chemical Vapor Deposition [O] . Ludovico Megalini, Simone Tommaso Šuran Brunelli, William O. Charles, 2018

机译：应变补偿的InGaAsP超晶格用于通过金属有机化学气相沉积减少在精确取向的（001）图案化Si衬底上生长的InP的缺陷
7. Strain-relaxed structure in (001)/(100)-oriented epitaxial Pb(Zr,Ti)O3 films grown on (100) SrTiO3 substrates by metal organic chemical vapor deposition [O] . Hiroshi Nakaki, Yong Kwan Kim, Shintaro Yokoyama, 2009

机译：通过金属有机化学气相沉积在（100）SRTIO3基板上生长的（001）/（100）的菌株弛豫结构（001）/（100）的外延PB（Zr，Ti）O3薄膜

BST Films Grown by Metal Organic Chemical Vapor Deposition Incorporating Real-Time Control of Stoichiometry.

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