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Structural and optical properties of a-Si_(1-x)C_x:H films synthesized by dc magnetron sputtering technique

机译:直流磁控溅射技术合成的a-Si_(1-x)C_x:H薄膜的结构和光学性质

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摘要

Hydrogenated amorphous SiC films (a-Si_(1-x)C_x:H) were prepared by dc magnetron sputtering technique on p-type Si(100) and corning 9075 substrates at low temperature, by using 32 sprigs of silicon carbide (6H-SiC). The deposited a-Si_(1-x)C_x:H film was realized under a mixture of argon and hydrogen gases. The a-Si_(1-x)C_x:H films have been investigated by scanning electronic microscopy equipped with an EDS system (SEM-EDS), X-ray diffraction (XRD), secondary ions mass spectrometry (SIMS), Fourier transform infrared spectroscopy (FTIR), UV-vis-IR spectrophotometry, and photoluminescence (PL). XRD results showed that the deposited film was amorphous with a structure as a-Si_(0.80)C_(0.20):H corresponding to 20 at.% carbon. The photoluminescence response of the samples was observed in the visible range at room temperature with two peaks centred at 463 nm (2.68 eV) and 542 nm (2.29eV). In addition, the dependence of photoluminescence behaviour on film thickness for a certain carbon composition in hydrogenated amorphous SiC films (a-Si_(1-x)C_x:H) has been investigated.
机译:通过使用32根碳化硅(6H-S)低温在p型Si(100)和康宁9075衬底上通过直流磁控溅射技术制备氢化非晶SiC薄膜(a-Si_(1-x)C_x:H) SiC)。在氩气和氢气的混合物下实现了沉积的a-Si_(1-x)C_x:H膜。已通过配备EDS系统(SEM-EDS),X射线衍射(XRD),二次离子质谱(SIMS),傅立叶红外光谱仪的扫描电子显微镜研究了a-Si_(1-x)C_x:H膜光谱(FTIR),紫外可见光谱(UV-vis-IR)分光光度法和光致发光(PL)。 XRD结果表明,所沉积的膜是无定形的,具有a-Si_(0.80)C_(0.20):H的结构,对应于20at。%的碳。在室温下的可见光范围内观察到样品的光致发光响应,两个峰分别位于463 nm(2.68 eV)和542 nm(2.29eV)处。另外,已经研究了氢化非晶SiC膜(a-Si_(1-x)C_x:H)中特定碳组成的光致发光行为对膜厚度的依赖性。

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  • 来源
    《Applied Surface Science》 |2010年第14期|p.4591-4595|共5页
  • 作者单位

    Silicon Technology Development Unit (UDTS), 02 Bd, Frantz FANON, B.P. 140, Algiers, Algeria;

    Silicon Technology Development Unit (UDTS), 02 Bd, Frantz FANON, B.P. 140, Algiers, Algeria;

    Silicon Technology Development Unit (UDTS), 02 Bd, Frantz FANON, B.P. 140, Algiers, Algeria;

    Silicon Technology Development Unit (UDTS), 02 Bd, Frantz FANON, B.P. 140, Algiers, Algeria;

    Silicon Technology Development Unit (UDTS), 02 Bd, Frantz FANON, B.P. 140, Algiers, Algeria;

    Silicon Technology Development Unit (UDTS), 02 Bd, Frantz FANON, B.P. 140, Algiers, Algeria;

    Houari Boumediene Science and Technology University (USTHB), Physics Faculty, Algiers, Algeria;

    Houari Boumediene Science and Technology University (USTHB), Physics Faculty, Algiers, Algeria;

    Houari Boumediene Science and Technology University (USTHB), Physics Faculty, Algiers, Algeria;

    Algerian Nuclear Research Center (CRNA), Algiers, Algeria;

    rnSilicon Technology Development Unit (UDTS), 02 Bd, Frantz FANON, B.P. 140, Algiers, Algeria;

    Silicon Technology Development Unit (UDTS), 02 Bd, Frantz FANON, B.P. 140, Algiers, Algeria;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    silicon carbide; sputtering; amorphous film; structure; luminescence; SIMS;

    机译:碳化硅溅射非晶膜结构体;发光模拟人生;
  • 入库时间 2022-08-18 03:07:29

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