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Etching and annealing of substrates for superconducting multilayers and devices

机译:用于超导多层和器件的基板的蚀刻和退火

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The structural and electrical quality of YBa/sub 2/Cu/sub 3/O/sub 7- delta / grown on ion-etched substrates by a variety of techniques was investigated. Co-evaporated YBa/sub 2/Cu/sub 3/O/sub 7- delta / films deposited and postannealed on etched LaAlO/sub 3/ substrates have substantially higher room-temperature resistivities and wider c-axis rocking curve widths than films on unetched substrates. Annealing of the etched substrate prior to evaporation narrows the c-axis rocking curve width and restores resistivity and critical current densities to values comparable to those of the unetched controls. Laser-ablated films on etched substrates show a smaller absolute magnitude of rocking curve broadening and no change in DC electrical properties. An increase of the inhomogeneous strain was also observed in coevaporated postannealed and laser-ablated films on etched substrates.
机译:研究了通过各种技术在离子蚀刻基板上生长的YBa / sub 2 / Cu / sub 3 / O / sub7-δ的结构和电学性质。与蚀刻后的LaAlO / sub 3 /基板上沉积和后退火的共蒸发YBa / sub 2 / Cu / sub 3 / O / sub 7-δ/薄膜相比,其上的薄膜具有更高的室温电阻率和更宽的c轴摇摆曲线宽度未蚀刻的基板。在蒸发之前对蚀刻后的基板进行退火会使c轴摇摆曲线的宽度变窄,并将电阻率和临界电流密度恢复到与未蚀刻的对照相当的值。蚀刻后的基板上的激光烧蚀薄膜显示出较小的摇摆曲线绝对幅度,并且直流电性能没有变化。在蚀刻后的基板上的共蒸发后退火膜和激光烧蚀膜中,还观察到不均匀应变的增加。

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