...
首页> 外文期刊>IEEE Transactions on Applied Superconductivity >Linear defects in epitaxial Y-Ba-Cu-O films: their role inanisotropic vortex pinning and microwave surface resistance
【24h】

Linear defects in epitaxial Y-Ba-Cu-O films: their role inanisotropic vortex pinning and microwave surface resistance

机译:外延Y-Ba-Cu-O薄膜中的线性缺陷:它们在各向异性涡旋钉扎和微波表面电阻中的作用

获取原文
获取原文并翻译 | 示例
   

获取外文期刊封面封底 >>

       

摘要

YBa2Cu3O7-δ films exhibit two orders of magnitude higher critical current density, Jc, and a few times higher microwave surface resistance, Rs, than single crystals. This evidences a different nature of crystal defects, which are responsible for the pinning and HF losses. Several types of dislocation arrays are identified in YBCO films by TEM/HREM and XRD. An analysis of Jc(H,T,θ) and Rs(T)-dependencies along with X-ray and HREM data for films grown via various modes allows to differentiate contributions to Jc and Rs from out-of-plane and in-plane edge dislocations. The higher the density of edge dislocations within YBCO film the higher are Jc and Rs. Stress-strain field calculations allow one to comprehend the difference between out-of-plane and in-plane dislocations effects
机译:与单晶相比,YBa2Cu3O7-δ薄膜的临界电流密度Jc高两个数量级,而微波表面电阻Rs高出几倍。这证明了晶体缺陷的不同性质,其是造成钉扎和HF损耗的原因。通过TEM / HREM和XRD在YBCO薄膜中鉴定出几种类型的位错阵列。对通过各种模式生长的胶片的Jc(H,T,θ)和Rs(T)依赖性以及X射线和HREM数据进行分析,可以区分平面外和平面内对Jc和Rs的贡献边缘脱位。 YBCO薄膜中边缘位错的密度越高,Jc和Rs越高。应力-应变场计算使人们能够理解平面错位效应与平面错位效应之间的差异

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号