首页> 中文期刊>电子显微学报 >缺陷对坡莫合金薄膜磁畴翻转钉扎影响的洛伦兹透射电镜显微研究

缺陷对坡莫合金薄膜磁畴翻转钉扎影响的洛伦兹透射电镜显微研究

     

摘要

A permalloy film with approximate l00nm thickness was sputtered on a holey carbon coated copper grid using a magnetron sputtering technology. The morphological, crystal structural, and chemical properties of the permalloy film and its defects inside were systematically characterized. A formation mechanism of the defects introduced into the permalloy film was proposed. A Lorentz TEM was used to observe the influence of these defects on the distribution of magnetic moments, and on the dynamical motion of domain wall of the permalloy film during the magnetic reversal. The experimental results reveal that the introduced defects appear a pinning effect of repulsing the motion of magnetic domain wall in the initial stage of magnetic reversal process and then change into an attraction in the rest of reversal process.%利用磁控溅射法,在具有孔洞缺陷的铜网碳膜上成功地溅射了一层厚度100nm,具有圆形缺陷的坡莫合金薄膜.结合常规透射电镜分析测试,研究了此类缺陷的形成机理及结构性质.利用洛伦兹透射电镜观察缺陷对周围磁矩的影响,以及在磁化反转过程中,缺陷对畴壁运动的影响.结果表明,此类缺陷是不同于膜本身的第二相弱磁性材料,它对畴壁的运动有着先排斥后吸引的钉扎作用.

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