Reduction of gate hysteresis above ambient temperature via ambipolar pulsed gate sweeps in carbon nanotube field effect transistors for sensor applications

摘要

We investigate the hysteresis behavior in carbon nanotube u0002CNTu0003 field effect transistors u0002CNFETsu0003nupon pulsed gate voltages u0002Vgu0003 above ambient temperature within 300–390 K. Assuming chargentrapping near the CNT channel to be the major mechanism behind gate hysteresis, we performncharge trapping experiments based on Vg pulses and find that CNFET charge trapping is increasingnwith temperature. We assess the impact of thermally enhanced charge trapping on the hysteresisnreduction performance of two different pulsed Vg sweeps. One of the two sweeps, consisting ofnalternating polarity pulses, is shown to essentially eliminate gate hysteresis in the studiedntemperature range. © 2010 American Institute of Physics. u0004doi:10.1063/1.3499363