Hysteresis reduction and measurement range enhancement of carbon nanotube based NO_2 gas sensors by pulsed gate voltages

摘要

We investigate the possibility of applying rectangular voltage pulses to the gate electrode of carbon nanotube field effect transistors (CNFETs) for NO_2 detection. CNFET gate characteristics measured using pulsed gate voltages show a reduction of hysteresis by about 20% compared to measurements with linearly swept gate voltages. Moreover, an enhancement of the measurement range is observed in the pulsed regime. The characterized CNFET devices are based on individual single-walled carbon nanotubes (SWNTs), which act as the sensing elements.