Reduction of gate hysteresis above ambient temperature via ambipolar pulsed gate sweeps in carbon nanotube field effect transistors for sensor applications

摘要

We investigate the hysteresis behavior in carbon nanotube (CNT) field effect transistors (CNFETs) upon pulsed gate voltages (V_g) above ambient temperature within 300-390 K. Assuming charge trapping near the CNT channel to be the major mechanism behind gate hysteresis, we perform charge trapping experiments based on V_g pulses and find that CNFET charge trapping is increasing with temperature. We assess the impact of thermally enhanced charge trapping on the hysteresis reduction performance of two different pulsed V_g sweeps. One of the two sweeps, consisting of alternating polarity pulses, is shown to essentially eliminate gate hysteresis in the studied temperature range.