3 3 Preparing method of the 3D wrap gate structured carbon nanotube transistors in aqueous solution and 3D wrap gate structured carbon nanotube transistors by the same

摘要

The present invention relates to a method to manufacture three-dimensional (3D) wrap gate structured carbon nanotube (CNT) transistor contributing to productivity and manufacturing cost reduction of the CNT transistor. According to the present invention, the method comprises the following steps: selectively modifying the surface of a CNT with a chemical functional group; dispersing the selectively modified CNT in a non-polar solvent to form a dispersion solution; adding a polar solvent to the dispersion solution to form a polar solvent concentration part and a non-polar solvent concentration part on the surface of the CNT in accordance with the degree of surface modified by the chemical functional group; adding an insulating film precursor to the dispersion solution where the polar solvent is added and diffusing the insulating film precursor to the polar solvent concentration part to form an insulating film modified by the functional group on the polar solvent concentration part; and adding a metal precursor to the dispersion solution where the insulating film precursor is added, to form a gate metal layer on the modified insulating film.