Kink current suppression improvement of metal-induced laterally crystallized silicon thin-film transistors employing asymmetric-channel dual-gate structure

摘要

A metal-induced laterally crystallized silicon thin-film transistor (TFT) with an asymmetric-channel dual-gate structure was fabricated and characterized. It features a sub-TFT near the drain with multichannel consisting of narrower unit channel width, resulting in higher field-effect mobility compared to a sub-TFT near the source with single-channel. The proposed TFT effectively suppressed the kink current with a field-effect mobility to be almost on a level with the conventional single-gate TFT. This improvement was explained by measurement of floating voltages revealing that the sub-TFT near the source of the proposed TFT operates in the near saturation regime under high drain voltages.