LOW-TEMPERATURE POLYCRYSTALLINE SILICON THIN-FILM TRANSISTOR BASED ON DUAL-GATE STRUCTURE AND MANUFACTURING METHOD THEREFOR

摘要

The present invention proposes a low temperature polysilicon thin film transistor having a double gate structure and a method of manufacturing the low temperature polysilicon thin film transistor. Low temperature polysilicon thin film transistors include a substrate, one or more patterned amorphous silicon (a-Si) layers disposed on the barrier layer of the substrate to form a lower gate, an N-type metal oxide semiconductor (NMOS) disposed on the barrier layer, and a barrier P-type metal oxide semiconductor (PMOS) disposed in the layer. The NMOS includes a patterned gate electrode (GE) layer as the top gate, and the bottom gate and the patterned GE layer formed by the one or more patterned amorphous silicon layers form a double gate structure. The present invention proposes a low temperature polysilicon thin film transistor which further stabilizes the current voltage characteristic, improves driving capability, reduces power consumption, and increases yield.