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Strain response of high mobility germanium n-channel metal-oxide- semiconductor field-effect transistors on (001) substrates

机译:(001)衬底上高迁移率锗n沟道金属氧化物半导体场效应晶体管的应变响应

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摘要

Well-behaved Ge n-channel metal-oxide-semiconductor field-effect transistors on (001) substrates with dispersion-free, high on/off ratio, and high peak mobility are demonstrated. The interface trap density is effectively reduced down to 5 × 10~(11) cm~(-2) eV~(-1) near midgap by GeO_2 passivation using rapid thermal oxidation, resulting in high peak mobility of ~1050 cm~2/Vs. The fast roll-off of the mobility at high electric field is probably due to the large surface roughness scattering. By applying uniaxial (110) tensile strain (0.08%) on (110) channel direction, the best mobility enhancement (12%) can be achieved. The calculated strain responses with proper stress configurations are consistent with experimental results.
机译:证明了(001)衬底上行为良好的Ge n沟道金属氧化物半导体场效应晶体管具有无分散性,高开/关比和高峰值迁移率。通过快速热氧化GeO_2钝化,有效地将界面陷阱密度降低至中带隙附近的5×10〜(11)cm〜(-2)eV〜(-1),从而产生了约1050 cm〜2 /的高峰迁移率VS.高电场下迁移率的快速下降可能归因于较大的表面粗糙度散射。通过在(110)通道方向上施加单轴(110)拉伸应变(0.08%),可以实现最佳的迁移率增强(12%)。具有适当应力配置的计算应变响应与实验结果一致。

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  • 来源
    《Applied Physics Letters》 |2011年第2期|p.022106.1-022106.3|共3页
  • 作者单位

    Graduate Institute of Electronics Engineering and Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan;

    Graduate Institute of Electronics Engineering and Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan;

    Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan;

    National Nano Device Labs, Hsinchu 300, Taiwan;

    Graduate Institute of Electronics Engineering and Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan;

    Graduate Institute of Electronics Engineering and Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan,Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan,National Nano Device Labs, Hsinchu 300, Taiwan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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