机译:(001)衬底上高迁移率锗n沟道金属氧化物半导体场效应晶体管的应变响应
Graduate Institute of Electronics Engineering and Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan;
Graduate Institute of Electronics Engineering and Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan;
Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan;
National Nano Device Labs, Hsinchu 300, Taiwan;
Graduate Institute of Electronics Engineering and Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan;
Graduate Institute of Electronics Engineering and Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan,Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan,National Nano Device Labs, Hsinchu 300, Taiwan;
机译:应变锗n沟道金属氧化物半导体场效应晶体管中电子迁移率的提高
机译:应变效应和表面取向对弹道锗n沟道金属氧化物半导体场效应晶体管驱动电流增强的影响
机译:高迁移率沟道金属氧化物半导体场效应晶体管的体硅基板上应变硅-锗梯度薄层上的纯锗外延生长
机译:锗组成对玻璃基板上连续波激光横向结晶N沟道多晶硅锗薄膜晶体管的影响
机译:应变对硅和锗p型金属氧化物半导体场效应晶体管的空穴迁移率的影响
机译:基于再生和注入方法的N沟道GaN金属氧化物半导体场效应晶体管的制作和评估
机译:具有ZrO2和Sm2O3栅极电介质的n沟道金属氧化物半导体场效应晶体管中电子迁移率降低机制的温度依赖性
机译:绝缘体上硅(sOI)金属氧化物半导体场效应晶体管(mOsFET's)的总剂量响应