Total Dose Response of Silicon-on-Insulator (SOI) Metal-Oxide- Semiconductor Field-Effect Transistor's (MOSFET's)

摘要

Total dose response of both NMOS and PMOS FET's fabricated on SIMOX and ZMR substrates was studied. Two types of back channel leakage currents were identified for the SIMOX devices. A back channel leakage due to MOSFET action uses the substrate bias as the gate bias. The other component is due to soft reverse characteristics of the body-drain junction. The back channel leakage due to MOSFET action varies with the substrate bias and thus varies with irradiation due to threshold voltage shift. The soft reverse current is a function of drain-body voltage and hence varies with substrate bias and irradiation. The threshold voltage, I-V characteristics, and subthreshold currents of both front and back channels as a function of total dose were obtained. Theses. (rrh)