Neutron doping effects in epitaxially laterally overgrown n-GaN

摘要

Thermal neutron irradiation and annealing effects were studied for undoped n-GaN prepared by epitaxial lateral overgrowth (ELOG). Electron beam induced current (EBIC) imaging and profiling prior to irradiation showed that the residual donor doping in our ELOG samples was about three times higher in the high-dislocation-density ELOG wing than in the low-dislocation-density ELOG window regions. Irradiation with thermal neutrons and subsequent annealing led to greatly improved doping uniformity, as evidenced by EBIC imaging. The neutron transmutation doping avoids the anisotropy of donor incorporation efficiency for different planes during ELOG and provides a uniform doping environment. Capacitance-voltage profiling on such samples showed the presence of electrically active centers with concentration close to the concentration of Ge donors produced by Ga interaction with thermal neutrons.