机译:外延横向生长的GaN薄膜中的中子辐射效应
Institute of Rare Metals B. Tolmachevsky 5 Moscow 119017 Russia;
Institute of Rare Metals B. Tolmachevsky 5 Moscow 119017 Russia;
Institute of Rare Metals B. Tolmachevsky 5 Moscow 119017 Russia;
Institute of Rare Metals B. Tolmachevsky 5 Moscow 119017 Russia;
Institute of Microelectronics Technology RAS Chernogolovka 142432 Russia;
Institute of Microelectronics Technology RAS Chernogolovka 142432 Russia;
Obninsk Branch of Federal State Unitary Enterprise Karpov Institute of Physical Chemistry Kiev Avenue Obninsk Kaluga Region 249033 Russia;
Obninsk Branch of Federal State Unitary Enterprise Karpov Institute of Physical Chemistry Kiev Avenue Obninsk Kaluga Region 249033 Russia;
Obninsk Branch of Federal State Unitary Enterprise Karpov Institute of Physical Chemistry Kiev Avenue Obninsk Kaluga Region 249033 Russia;
School of Advanced Materials Engineering and Research Center for Advanced Materials Development Engineering College Chonbuk National University Chonju 561-756 Korea;
School of Advanced Materials Engineering and Research Center for Advanced Materials Development Engineering College Chonbuk National University Chonju 561-756 Korea;
Department of Materials Science Engineering University of Florida Gainesville Florida 32611 USA;
GaN; ELOG; neutron irradiation;
机译:外延横向生长的GaN薄膜中的中子辐射效应
机译:外延横向生长的n-GaN中的中子掺杂效应
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机译:氢化物气相外延使蓝宝石衬底上的外延横向生长的GaN薄膜中的晶体倾斜
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机译:在(111)3C-SIC上生长的外延ALN / GAN薄膜缺陷结构研究
机译:外延横向生长的GaN薄膜中的中子辐射效应
机译:金属有机化学气相沉积法横向外延生长的GaN非平面衬底的三维微观结构表征