Low temperature boron doped diamond

摘要

Low temperature boron doped diamond (LT-BDD) film deposited under 600 ℃ (460 ℃ minimum) has been reported. Study reveals that the deposition temperature and boron dopant cause nanocrystalline diamond (NCD) instead of ultrananocrystalline diamond (UNCD~®). Unlike conventional NCD, LT-BDD has faster renucleation rate, which ensures a low surface roughness (approximately 10 run at 0.6 μm thickness). The overall characteristics of LT-BDD are mixed with the characteristics of conventional NCD and UNCD. Raman spectrum and electrochemical characterization prove that the quality of LT-BDD is similar to those grown under 650-900 ℃. LT-BDD enables diamond applications on microelectromechanical systems, bio- and optical technologies.