PROCESS FOR MAKING DIAMOND, DOPED DIAMOND, DIAMOND-CUBIC BORON NITRIDE COMPOSITE FILMS AT LOW TEMPERATURE

摘要

A process and apparatus that may be used for the production of diamond and doped diamond films at high rates by activated reactive vapor deposition. Carbon is evaporated in a vacuum chamber (10) in the presence of atomic hydrogen containing plasma to form diamond precursors which then deposit on a substrate (24) located within the vacuum chamber. The substrate temperature is maintained at between about 20-600°C.