Device Electrostatics and High Temperature Operation of Oxygen Terminated Boron Doped Diamond MOS Capacitor and MOSFET

摘要

The oxygen-terminated bulk boron doped diamond MOSFET has been designed and simulated using coupled drift-diffusion transport-poisson solver within the TCAD analysis. The diamond MOS capacitor (MOSC) performance is dictated by accumulation, depletion, and deep depletion regimes of operation. We successfully calibrate the fitting parameters in the physical models such as doping and high-field limited carrier mobility, dopant ionization energies, and energy band gap dependence on temperature with experimental C- V and transfer characteristics. We show that the threshold voltage is sensitive to high temperatures. The device exhibits reasonably good ON to OFF current ratio of 10⁸ -10⁴at wide temperature range from 300 K - 550 K. We also show that the device exhibits a breakdown voltage of -270 V with the chosen impact ionization coefficients.