Low temperature thermal conductivity of heavily boron-doped synthetic diamond: Influence of boron-related structure defects

摘要

Thermal conductivity of single-crystal boron-doped diamonds (BDD) with ～2.10~(19)cm~(-3) (～120ppm) and 5.10~(19) cm~(-3) (～300ppm) boron content was studied by a steady-state method in a temperature range of 20-400. K. The obtained data were analyzed within Callaway model framework. The values of dislocation density obtained from best fit of experimental data and from density of etch pits measuring were compared. Their discrepancy suggests presence of some other boron-related defects in crystal lattice.