机译:MOCVD在精确的Ge / Si(001)衬底上生长的单片集成InGaAs / GaAs / AlGaAs量子阱激光器
Institute for Physics of Microstructures of the Russian Academy of Sciences, 603950 Nizhny Novgorod, Russia,Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod, Russia;
Physical-Technical Research Institute of Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod, Russia;
Institute for Physics of Microstructures of the Russian Academy of Sciences, 603950 Nizhny Novgorod, Russia,Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod, Russia;
FGUE 'Salut,' 603950 Nizhny Novgorod, Russia;
Institute for Physics of Microstructures of the Russian Academy of Sciences, 603950 Nizhny Novgorod, Russia,Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod, Russia;
Institute for Physics of Microstructures of the Russian Academy of Sciences, 603950 Nizhny Novgorod, Russia,Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod, Russia;
Institute for Physics of Microstructures of the Russian Academy of Sciences, 603950 Nizhny Novgorod, Russia,Physical-Technical Research Institute of Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod, Russia;
Institute for Physics of Microstructures of the Russian Academy of Sciences, 603950 Nizhny Novgorod, Russia,Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod, Russia;
Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod, Russia;
Physical-Technical Research Institute of Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod, Russia;
Institute for Physics of Microstructures of the Russian Academy of Sciences, 603950 Nizhny Novgorod, Russia;
Institute for Physics of Microstructures of the Russian Academy of Sciences, 603950 Nizhny Novgorod, Russia;
Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod, Russia;
Institute for Physics of Microstructures of the Russian Academy of Sciences, 603950 Nizhny Novgorod, Russia;
Institute for Physics of Microstructures of the Russian Academy of Sciences, 603950 Nizhny Novgorod, Russia;
Institute for Physics of Microstructures of the Russian Academy of Sciences, 603950 Nizhny Novgorod, Russia,Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod, Russia;
机译:在精确且倾斜GE / Si(001)基板上的MOCVD产生的InGaAs / GaAs / Algaas激光结构的受刺激发射
机译:通过选择性区域MOCVD集成单片光电二极管的应变层InGaAs-GaAs-AlGaAs激光器
机译:在GaAs衬底上通过MOCVD外延生长的InGaAs / GaAs / AlGaAs激光器发射的波长为1190 nm
机译:在轴Si(001)衬底上整体生长InAs / GaAs量子点光子晶体带边激光器
机译:基于在结构化衬底上生长的低阈值应变InGaAs / GaAs量子阱激光器的光电器件
机译:应变补偿的InGaAsP超晶格用于通过金属有机化学气相沉积减少在精确取向的(001)图案化Si衬底上生长的InP的缺陷
机译:42GHz重复频率的单片InGaAs / AlGaAs双量子阱激光器的无源锁模
机译:单片二维表面发射应变层InGaas / alGaas和alInGaas / alGaas二极管激光器阵列,具有超过50%的差分量子效率