FABRICATION OF SINGLE CRYSTAL ALGAAS LAYER GROWN ON SAPPHIRE SUBSTRATE USING MOCVD SYSTEM

摘要

The present invention relates to a method for forming an indium gallium arsenide (AlGaAs) layer on a sapphire substrate and a substrate manufactured using the same, and more specifically, relates to a method for growing a high quality AlGaAs layer on a transparent sapphire substrate and manufacturing the same. According to the present invention, the substrate manufacturing method comprises: a step of forming a gallium arsenide (GaAs) or AlxGa1-xAs (x0.05) buffer layer on a sapphire substrate; a step of performing low temperature treatment to the GaAs or AlxGa1-xAs (x0.05) buffer layer formed on the sapphire substrate to be recrystallized; and a step of growing an AlGaAs layer on the recrystallized GaAs or AlxGa1-xAs (x0.05) buffer layer. The AlGaAs layer having a different lattice constant and a high quality is grown on an aluminum oxide (Al2O3) substrate using metalorganic chemical vapor deposition (MOCVD) such that a new transparent substrate with a high strength can be used to manufacture an AlGaAs system element.;COPYRIGHT KIPO 2016