Method for manufacturing -Ga 2 O 3 single crystal layer, sapphire substrate with -Ga 2 O 3 single crystal layer, -Ga 2 O 3 free-standing single crystal and method for producing the same

摘要

Easy and inexpensive -Ga₂O₃Method for producing single crystal layer and -Ga₂O₃A sapphire substrate with a single crystal layer, -Ga₂O₃And to provide a method for manufacturing the self-supporting single crystal plate. -Ga₂O₃By using a single crystal substrate having an atomic arrangement similarity to a surface on which a crystal is epitaxially grown but having a surface having no rotational symmetry, a -Ga₂O₃And forming a single crystal layer on the substrate₂O₃The above problem can be solved by using a method of manufacturing a single crystal layer. In addition, -Ga₂O₃Sapphire substrate with monocrystalline layer and -Ga₂O₃Free-standing single crystal and a method for producing them.