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Catalyst-Assisted Large-Area Growth of Single-Crystal β-Ga2O3 Nanowires on Sapphire Substrates by Metal–Organic Chemical Vapor Deposition

机译:金属有机化学气相沉积法在蓝宝石衬底上催化剂辅助大面积生长单晶β-Ga2O3纳米线

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摘要

In this work, we have achieved synthesizing large-area high-density -Ga O nanowires on c-plane sapphire substrate by metal–organic chemical vapor deposition assisted with Au nanocrystal seeds as catalysts. These nanowires exhibit one-dimensional structures with Au nanoparticles on the top of the nanowires with lengths exceeding 6 μm and diameters ranging from ~50 to ~200 nm. The Ga O nanowires consist of a single-crystal monoclinic structure, which exhibits strong ( 01) orientation, confirmed by transmission electronic microscopy and X-ray diffraction analysis. The PL spectrum obtained from these -Ga O nanowires exhibits strong emissions centered at ~360 and ~410 nm, respectively. The energy band gap of the -Ga O nanowires is estimated to be ~4.7 eV based on an optical transmission test. A possible mechanism for the growth of -Ga O nanowires is also presented.
机译:在这项工作中,我们通过以金纳米晶种为催化剂的金属-有机化学气相沉积法在c面蓝宝石衬底上合成了大面积高密度-Ga O纳米线。这些纳米线表现出一维结构,纳米线的顶部具有金纳米颗粒,其长度超过6μm,直径范围为〜50至〜200 nm。 Ga O纳米线由单晶单斜晶结构组成,具有强(01)取向,这已通过透射电子显微镜和X射线衍射分析得到证实。从这些-Ga O纳米线获得的PL光谱分别显示出以〜360和〜410 nm为中心的强发射。根据光传输测试,-Ga O纳米线的能带隙估计为〜4.7 eV。还提出了生长-Ga O纳米线的可能机制。

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