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Substrate Induced Strain Field in FeRh Epilayers Grown on Single Crystal MgO (001) Substrates

机译:在单晶MgO(001)基底上生长的FeRh外延层中基底诱导的应变场

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摘要

Equi-atomic FeRh is highly unusual in that it undergoes a first order meta-magnetic phase transition from an antiferromagnet to a ferromagnet above room temperature (Tr ≈ 370 K). This behavior opens new possibilities for creating multifunctional magnetic and spintronic devices which can utilise both thermal and applied field energy to change state and functionalise composites. A key requirement in realising multifunctional devices is the need to understand and control the properties of FeRh in the extreme thin film limit (tFeRh < 10 nm) where interfaces are crucial. Here we determine the properties of FeRh films in the thickness range 2.5–10 nm grown directly on MgO substrates. Our magnetometry and structural measurements show that a perpendicular strain field exists in these thin films which results in an increase in the phase transition temperature as thickness is reduced. Modelling using a spin dynamics approach supports the experimental observations demonstrating the critical role of the atomic layers close to the MgO interface.
机译:等原子FeRh非常不寻常,因为它在室温以上(Trmag≈above370 K)经历从反铁磁体到铁磁体的一阶亚磁相变。这种行为为创建多功能磁性和自旋电子器件开辟了新的可能性,这些器件可以利用热能和外加场能来改变状态和功能化复合材料。实现多功能设备的关键要求是必须了解和控制界面至关重要的极端薄膜极限(tFeRh <10?nm)中FeRh的特性。在这里,我们确定了直接在MgO衬底上生长的2.5–10 nm厚度范围内的FeRh膜的特性。我们的磁力分析和结构测量表明,这些薄膜中存在垂直应变场,随着厚度的减小,相变温度会升高。使用自旋动力学方法进行建模可支持实验观察,从而证明靠近MgO界面的原子层的关键作用。

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