首页> 外文期刊>Annales de l'I.H.P >Surface morphology change of protective film on collector mirror related to implantation of Sn emitted from laser produced plasma in EUV light source
【24h】

Surface morphology change of protective film on collector mirror related to implantation of Sn emitted from laser produced plasma in EUV light source

机译:EUV光源激光产生等离子体中植入射线膜保护膜的表面形态变化

获取原文
获取原文并翻译 | 示例
           

摘要

The change in surface morphology of an amorphous TiO(2)protective film coated on a Mo/Si multilayer of an extreme ultraviolet (EUV) light collector mirror has been investigated. After long-time operation of an EUV light source, many pinholes of about 10 nm diameter were observed on the protective TiO(2)film surface. Accelerated aging tests with thin film samples that simulated surface conditions on the collector mirror suggest that crystallization of the protective film induced by Sn implantation is the main cause of the formation of the observed pinholes.
机译:研究了涂覆在极端紫外线(EUV)光集热镜的MO / Si多层上涂覆的无定形TiO(2)保护膜的表面形态的变化。在EUV光源的长时间操作之后,在保护性TiO(2)薄膜表面上观察到大约10nm直径的许多针孔。加速老化试验用薄膜样品,集电镜上的模拟表面条件表明,SN植入诱导的保护膜的结晶是所观察到的针孔形成的主要原因。

著录项

  • 来源
    《Annales de l'I.H.P》 |2020年第11期|115501.1-115501.5|共5页
  • 作者单位

    Gigaphoton Inc Hiratsuka Facil 3-25-1 Shinomiya Hiratsuka Kanagawa 2548555 Japan;

    Gigaphoton Inc Hiratsuka Facil 3-25-1 Shinomiya Hiratsuka Kanagawa 2548555 Japan;

    Gigaphoton Inc Hiratsuka Facil 3-25-1 Shinomiya Hiratsuka Kanagawa 2548555 Japan;

    Gigaphoton Inc Hiratsuka Facil 3-25-1 Shinomiya Hiratsuka Kanagawa 2548555 Japan;

    Gigaphoton Inc Hiratsuka Facil 3-25-1 Shinomiya Hiratsuka Kanagawa 2548555 Japan;

    Gigaphoton Inc Hiratsuka Facil 3-25-1 Shinomiya Hiratsuka Kanagawa 2548555 Japan;

    Tokyo Inst Technol Dept Mat Sci & Engn Midori Ku 4259 Nagatsuta Yokohama Kanagawa 2268502 Japan;

    Tokyo Inst Technol Dept Mat Sci & Engn Midori Ku 4259 Nagatsuta Yokohama Kanagawa 2268502 Japan;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    EUV; Photolithography; Laser produced plasma; Thin films;

    机译:EUV;光刻法;激光产生的等离子体;薄膜;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号