Growth of High-Quality ln_(0.4)Ga_(0.6)N Film on Si Substrate by Metal Organic Chemical Vapor Deposition

摘要

High-quality ln_(0.4)Ga_(0.6)N film grown on GaN/AIN/Si(111) templates was obtained by metal organic chemical vapor deposition (MOCVD) with negligible phase separation. A template of high-quality GaN grown on a Si(111) substrate using AIN buffer layers was used for subsequent ln_(0.4)Ga_(0.6)N growth. The GaN layer was 0.6 μm thick with racking-curve full width at half maximum (FWHM) for a GaN(002) peak better than 430 arcsec. The ln_(0.4)Ga_(0.6)N film grown was 0.3 μm thick with a dislocation density of 6 × 10~7 cm~(-2) and X-ray (ω-2θ) FWHM better than 130 arcsec.