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METHOD FOR HETEROEPITAXIAL GROWTH OF HIGH-QUALITY N-FACE GAN, INN, AND AIN AND THEIR ALLOYS BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION
METHOD FOR HETEROEPITAXIAL GROWTH OF HIGH-QUALITY N-FACE GAN, INN, AND AIN AND THEIR ALLOYS BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION
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机译:金属有机化学气相沉积法制备高品质N面Ga,In和AlN及其合金的异外延生长方法
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摘要
Methods for the heteroepitaxial growth of smooth, high quality films of N- face GaN film grown by MOCVD are disclosed. Use of a misoriented substrate and possibly nitridizing the substrate allow for the growth of smooth N-face GaN and other Group III nitride films as disclosed herein. The present invention also avoids the typical large (µm sized) hexagonal features which make N-face GaN material unacceptable for device applications. The present invention allows for the growth of smooth, high quality films which makes the development of N-face devices possible.
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