Threading Dislocation Blocking in Metamorphic InGaAs/GaAs for Growing High-Quality In_(0.5)Ga_(0.5)As and In_(0.3)Ga_(0.7)As on GaAs Substrate by Using Metal Organic Chemical Vapor Deposition

摘要

High quality In_(0.3)Ga_(0.7)As and In_(0.51) Ga_(0.49)As epilayers have been successfully grown on the GaAs substrate by MOCVD. A cross-sectional study by transmission electron microscopy showed that the threading dislocations (TDs) have been successfully contained and limited within the buffer layers designed to stop the elongation of TDs into the In_(0.3)Ga_(0.7)As and In_(0.51)Ga_(0.49)As epilayers. A TD density of 1 × 10~6 cm~(-2) in a fully relaxed In_(0.51)Ga_(0.49)As epilayer was achieved. The measurement of lifetimes of n- and p-type In_(0.51)Ga_(0.49) As has been done by using time-resolved photoluminescence. A great reduction in the number of recombination centers in the InGaAs epilayer has been shown.