Detailed Analysis of Carrier Transport In InAs(0.3)Sb(0.7) Layers Grown on GaAsSubstrates By Metalorganic Chemical-Vapor Deposition

摘要

InAs(0.3)Sb(0.7) layers with mirrorlike morphology have been grown on GaAssubstrates by low-pressure metalorganic chemical vapor deposition. A room-temperature electron Hall mobility of 2 x 10(exp 4)sq cm/Vs has been obtained for a 2-micrometer-thick layer. Low-temperature resistivity of the layers depended on TMIn flow rate and layer thickness. Hall mobility decreased monotonically with decreasing temperature below 300 K. A 77 K conductivity profile has shown an anomalous increase in the sample conductivity with decreasing thickness except in the near vicinity of the heterointerface. In order to interpret the experimental data, the effects of different scattering mechanisms on carrier mobility have been calculated, and the influences of the lattice mismatch and surface conduction on the Hall measurements have been investigated by applying a three-layer Hall-effect model.