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The derutadopingu formation formation manner null due to the organicity metal chemical vapor deposition method of GaAs epitaxial formation on the Si
The derutadopingu formation formation manner null due to the organicity metal chemical vapor deposition method of GaAs epitaxial formation on the Si
PURPOSE: To form a satisfactory GaAs delta-doping layer on an Si substrate while using metalorganic chemical vapor deposition (MOCVD). ;CONSTITUTION: When forming GaAs delta-doping on the Si substrate while utilizing MOCVD, a buffer layer exceeding 3 μm thickness is formed on the Si substrate and afterwards, the GaAs delta-doping layer is formed at a growing temperature of 700 to 750°C. Thus, the thermal dispersion of a dopant caused by a lot of transitions generated on a GaAs/Si interface can be prevented from being accelerated and an effect improving the characteristics of the GaAs delta- doping layer is generated.;COPYRIGHT: (C)1993,JPO
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