CeO2掺杂对ZnO薄膜气敏特性的影响

摘要

The doping effect of CeO2 in thin films structure, topography,grain size and gas sensing properties of ZnO thin films is investigated. The polycrystalline thin films with c-axis orientation can be obtained after thermal vacuum evaporation. The doping behavior can refine the grain size, simultaneously reduce the stoichiometric ratio from Zn:0=1:1.28 down to Zn:0=1:1.191. The XPS results show that Zn existed as +2 and 0 as -2 states. Additionally,GeO2 doping can dramatically enhance the sensitivities to ethanol and acetone,reaching up to 35 and 40, respectively.%ZnO薄膜进行CeO2掺杂,研究掺杂含量和热氧化对薄膜结构、表面、晶粒尺寸及气敏特性的影响.结果显示,用热蒸发制备的高纯Zn膜经500℃热氧化,获得c轴取向ZnO多晶薄膜.掺CeO2可抑制晶粒生长使颗粒细化平均粒径减小,同时改善了ZnO薄膜的体相化学计量比,Zn与O的比例从未掺杂时1∶1.28降到1∶1.191.XPS分析给出薄膜中Zn显+2价,O为-2价.掺CeO2(9％)可大大提高薄膜对乙醇和丙酮的敏感性,灵敏度分别达35和40.