基于SOI的MEMS压阻式高温压力敏感芯片的研制

摘要

设计并制备了一种基于SOI(silicon on insulator)材料的MEMS压阻式高温压力敏感芯片.在设计方面,通过理论计算与仿真,对敏感芯片各项参数进行了优化;在工艺方面,设计了基于标准MEMS工艺的制作流程,并创新性地提出了"器件区下沉"工艺步骤,以提高敏感芯片工艺制备的可靠性.采用316 L不锈钢基座对MEMS压力敏感芯片进行封装后,完成了温度、压力复合环境标定测试,结果显示其具有较高的测量精度,并可在20~220℃温度范围内稳定工作,具备在高温恶劣环境中应用的前景.%A high-temperature piezoresistive MEMS pressure-sensitive chip based on SOI was reported in this work .In terms of design,the parameters of the pressure-sensitive chip were optimized by theoretical calculation and simulation .In terms of process ,the standard MEMS technology production process was proposed ,where"sink device region" was a novel process step to improve the reliability of the chip .The MEMS pressure-sensitive chip was packed in 316L stainless steel base ,then the complex environment tests in temperature and pressure were conducted .The results show that the chip has high measurement accuracy and reliable operation in the temperature range of 20℃to 220℃,which is expected to be highly applicable to pressure measurements in harsh environments .