退火温度对Cr-Si压阻薄膜电性能的影响

摘要

采用射频磁控溅射法在氧化铝陶瓷基底上制备了Cr-Si-Ni-Ti压阻薄膜,研究了不同退火温度对薄膜电性能的影响.结果表明:在溅射态及退火温度低于600℃时,薄膜为非晶态.随着退火温度的升高,薄膜的电阻温度系数(TCR)逐渐增大,应变因子(GF)先增大后减小,室温电阻率(ρ)则逐渐降低.在退火温度为300℃时,Cr-Si-Ni-Ti压阻薄膜的电性能最好:TCR为-1.1×10-6/℃,GF为2.2,ρ为0.662 Ω·cm.%Cr-Si piezoresistive films were deposited on Al2O3 ceramic substrates by radio-frequency magnetron sputtering. The effects of annealing temperature on the electrical properties of the piezoresistive thin films were investigated. The results show that the microstructure of the thin flims at as-deposited state and annealed at temperature lower than 600 ℃ are amorphous state. The temperature coefficient of resistance (TCR) of the film increases steeply, the gauge factor increases at first and then goes down, the room temperature resistivity of the film decreases steeply with increasing of the annealing temperature. The Cr-Si-Ni-Ti thin flim annealed at 300 ℃ possesses the best electrical properties: TCR of -l.l×10-6/℃, GF of 2.2, and the electrical resistivity of 0.662 Ω · Cm.