机译:退火对PECVD法制备掺硼氢化纳米晶硅薄膜微结构和压阻性能的影响
Micro/Nano Science and Technology Center, Jiangsu University, Zhenjiang 212013, People's Republic of China,Department of Measurement and Control Technology, Jiangsu University, Zhenjiang 212013, People's Republic of China;
Micro/Nano Science and Technology Center, Jiangsu University, Zhenjiang 212013, People's Republic of China,Low-Dimension Material Micro/Nano Device and System Center, Changzhou University, Changzhou 213164, People's Republic of China;
Micro/Nano Science and Technology Center, Jiangsu University, Zhenjiang 212013, People's Republic of China;
机译:通过PECVD制备的非晶和部分纳米晶氢化硅薄膜的结构演变的拉曼表征
机译:各种直流偏压对氢稀释硅烷PECVD制备的氢化纳米晶硅光伏材料的微观结构和光学性能的调控
机译:氢稀释对通过等离子体增强化学气相沉积(PE-CVD)制备的氢化纳米晶硅(nc-Si:H)薄膜的结构,电学和光学性质的影响
机译:PECVD制备的磷掺杂氢化纳米晶硅薄膜微观结构和压阻性能的实验研究
机译:薄膜光伏电池中使用的氢化纳米晶硅的结构和电子特性。
机译:电沉积法制备纳米晶Cu2O薄膜的微观结构和光学性质
机译:压力和射频功率对等离子体沉积氢化非晶硅薄膜沉积速率和结构性能的影响