Method for Annealing Silicon Thin Films Using Conductive Layer and Polycrystalline Silicon Thin Films Prepared Therefrom

摘要

The present invention provides a method of annealing silicon thin film, which comprises providing a conductive layer underneath a silicon thin film, applying an electric field to the conductive layer to induce Joule heating and thereby to generate intense heat, and carrying out crystallization, elimination of crystal lattice defects, dopant activation, thermal oxidation and the like, of the silicon thin film; and a polycrystalline silicon thin film having high quality prepared by the method. The annealing method of the invention provides a polycrystalline silicon thin film which has virtually no crystal lattice defects, which is completely free from contamination by catalyst metal appearing in polycrystalline silicon thin films produced by crystallization methods such as MIC and MILC, and at the same time, is not accompanied by surface protrusions appearing in polycrystalline silicon thin films produced by ELC, while not incurring thermal deformation of glass substrate.