首页> 外文学位 >Piezoresistive cantilevers for characterizing thin-film gold electrical contacts.
【24h】

Piezoresistive cantilevers for characterizing thin-film gold electrical contacts.

机译:压阻悬臂,用于表征薄膜金电触点。

获取原文
获取原文并翻译 | 示例

摘要

The electronics packaging and testing industry is interested in new methods for making contacts to electronic chips to allow improvement or replacement of existing interconnect technologies. One approach involves the use of flexible contact structures integrated with the package or the testing apparatus which allow the device to be fully contacted by placing and pressing the interconnect array into contact. This technoΩlogy depends on the properties of low-force electrical contacts. The research presented is a careful characterization of the electromechanical properties of such contacts, using instrumented MEMS force sensors.; This work provides a sensor, measurement system and methodology for low force contact resistance data collection. This research includes the design, fabrication, and characterization of a micromechanical force sensor integrated with a 4-wire electrical contact characterization capability, a set of parametric measurements in the 10nN-10mN regime, and the development of qualitative design rules for small force thin film gold electrical contacts. The sensor consists of a silicon cantilever beam with a piezoresistive force sensor suitable for high-accuracy force measurements in the mN-nN range. The contact tips consist of a glass spheres for a controlled contact geometry as well as polystyrene spheres for highly-compliant contact structures. The contact halves are coated with varying thicknesses of evaporated, sputtered, or plated thin film gold. Combined with AFM scans and nanoindentation hardness measurements, correlations are found between the contact behavior, resistance measurements, and material characteristics over varied contact sizes, film types, thicknesses, and substrates.; Mean stable contact resistance (10) is achieved with less than 100μN force for 1800Å to 1.2μm thick gold. Differences in contact resistance from Hertzian elastic contact theory are attributed to the presence of asperities on the contact spheres, plasticity in the films, and differences in material properties for thin film vs. bulk form. The two most significant factors affecting contact resistance are film hardness and surface roughness. The contact resistance decreases and adhesion force increases with lowered film hardness and surface roughness. Hardness and roughness are functions of substrate properties, film manufacture method, and thickness. Low adhesion forces and low contact resistance are both desirable and present a design tradeoff.
机译:电子封装和测试行业对与电子芯片建立联系以允许改进或替换现有互连技术的新方法感兴趣。一种方法涉及使用与封装或测试设备集成在一起的柔性接触结构,该柔性接触结构允许通过将互连阵列放置并压入接触而使器件完全接触。此技术取决于低力电触点的属性。提出的研究是使用仪器化的MEMS力传感器对此类触点的机电性能进行仔细表征。这项工作为低力接触电阻数据收集提供了一种传感器,测量系统和方法。这项研究包括集成了4线电触点表征功能的微机械力传感器的设计,制造和表征,在10nN-10mN范围内的一组参数测量以及针对小力薄膜的定性设计规则的开发金电触点。该传感器由硅悬臂梁和压阻式力传感器组成,适用于mN-nN范围内的高精度力测量。接触尖端由用于控制接触几何形状的玻璃球以及用于高度顺应接触结构的聚苯乙烯球组成。半接触层涂有不同厚度的蒸发,溅射或镀金薄膜金。结合AFM扫描和纳米压痕硬度测量,可以发现接触行为,电阻测量和材料特性在各种接触尺寸,膜类型,厚度和基材上的相关性。对于1800Å至1.2μm厚的金,用不到100μN的力即可获得平均稳定的接触电阻(<10)。与Hertzian弹性接触理论相比,接触电阻的差异是由于接触球体上存在凹凸不平,薄膜的可塑性以及薄膜与本体形式的材料特性差异所致。影响接触电阻的两个最重要的因素是薄膜硬度和表面粗糙度。随着降低的膜硬度和表面粗糙度,接触电阻减小并且粘附力增大。硬度和粗糙度是基材性能,薄膜制造方法和厚度的函数。低粘附力和低接触电阻都是理想的,并且存在设计权衡。

著录项

  • 作者

    Pruitt, Beth L.;

  • 作者单位

    Stanford University.;

  • 授予单位 Stanford University.;
  • 学科 Engineering Mechanical.; Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2002
  • 页码 207 p.
  • 总页数 207
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 机械、仪表工业;工程材料学;
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号