Effect of Annealing Temperatures on TCR and Resistance Values for DC Sputtered Cr-Si Thin Film Resistors,

摘要

Thin film high value resistros composed of a silicon chromium mixture were sputter deposited under d.c. conditions in argon on to 99.6$ as-fired alumina substrates. Reported are effects on TCR and resistor values which results from the variation of annealing temperatures. The resistors are for use in th fabrcation of hybrid microcircuiting intended for circuit applications whichinvolve ow power, low noise, digital and linear design requirements. (Author)