用于InP基DHBT制备的GaAs0.51 Sb0.49湿法腐蚀研究

摘要

We present a study of wet etching of GaAs0.51 Sb0.49 grown on InP substrate with gas source molecular beam epitaxy(GSMBE) using citric acid,sulfuric acid as well as phosphoric acid based solutions. The etching rate and roughness of the etched surfaces were investigated with different volume ratio of the solutions. The citric acid/hydrogen peroxide solutions exhibit a slow etching rate but good roughness compared to the sulfuric acid and phosphoric acid based solutions. With the optimal volume ratio 5: 1 of the citric acid/hydrogen peroxide etchant, the InP/GaAsSb DHBT device was processed and fabricated as a good evaluation.%介绍了采用基于柠檬酸、硫酸和磷酸的腐蚀溶液对气态分子束外延生长的InP衬底上GaAs0.51 Sb0.49湿法腐蚀研究工作.对不同体积比的腐蚀溶液的腐蚀速率和表面粗糙度进行了研究.和硫酸及磷酸基腐蚀液相比,柠檬酸/双氧水腐蚀液的腐蚀速率较慢但具有很好的表面粗糙度.作为验征,采用最优体积比5∶1的柠檬酸/双氧水腐蚀溶液,工艺制备出InP/GaAsSb DHBT器件.