THE PRECURSOR P(SIME2-TERT-BU)3 FOR INP QUANTUM DOTS, THE METHOD FOR PREPARING IT, THE INP QUANTUM DOTS CONTAINING P(SIME2-TERT-BU)3 AND THE METHOD FOR PREPARING IT

摘要

PURPOSE: A method for preparing precursor P(SiMe_2-tert-Bu)_3 for producing InP quantum dot is provided to form InP quantum dot having strong binding power and to ensure excellent luminous efficiency. CONSTITUTION: A method for preparing P(SiMe_2-tert-Bu)_3 comprises: a step of preparing Na/K alloy; a step of adding dimethoxyethane and red phosphorus to the Na/K alloy and heating; a step of adding tertbutyldimethylchlorosilane dissolved by dimethoxyethane into the heated solution and heating; a step of extracting P(SiMe_2-tert-Bu)_3 from the mixture solution. An InP quantum dot contains the precursor P(SiMe_2-tert-Bu)_3.